STM23L412闪存擦除和编程（EEPROM仿真）问题

问：

我正在尝试编写一个代码来存储一些值STM32L412我成功擦除该页面，但我没有向其写入任何内容，该代码基于参考手册（RM0394）https://www.st.com/resource/en/reference_manual/rm0394-stm32l41xxx42xxx43xxx44xxx45xxx46xxx-advanced-armbased-32bit-mcus-stmicroelectronics.pdf 第83页和第84页

uint32_t *address_to_write = (uint32_t *)0x0801F800; // Address to write the data page 63
uint64_t data_to_write = 0x1122334455667788; //Data to be written to the flash
uint32_t data_been_read; //read the data which been written

void clearFlash(uint8_t pagesCount, uint8_t firstPage){
    HAL_FLASH_Unlock(); //Unlock the flash
    FLASH->SR &= ~(FLASH_FLAG_PGSERR | FLASH_FLAG_PGAERR | FLASH_FLAG_WRPERR |FLASH_FLAG_OPERR | FLASH_FLAG_EOP); // Clear all error programming flags
    for (int i = 0; i<pagesCount; i++){ //Looping for clearing enough space.
        while(FLASH->SR & FLASH_SR_BSY); // Wait until the BSY bit is cleared
        while((FLASH->SR & FLASH_SR_PGSERR)); //PGSERR should not be set
        FLASH->CR |= FLASH_CR_PER;      //Set erase process
        FLASH->CR &= ~FLASH_CR_PNB_Msk; //Clear address mask
        FLASH->CR |= ((firstPage+i)<<FLASH_CR_PNB_Pos); //place in address
        FLASH->CR |= FLASH_CR_STRT; //Start clearing the flash
    }
    HAL_FLASH_Lock(); //lock the flash
}

void flash_program_double_word(uint32_t *address, uint64_t data) {
    HAL_FLASH_Unlock(); //Unlock the flash
    while (FLASH->SR & FLASH_SR_BSY);//Check that no Flash main memory operation is ongoing
    FLASH->SR = FLASH_SR_PGSERR | FLASH_SR_PGAERR | FLASH_SR_SIZERR | FLASH_SR_PROGERR; //Clear all error programming flags
    FLASH->CR |= FLASH_CR_PG; //Set the PG bit in the Flash control register
    //Perform the data write operation
    *(__IO uint32_t*)address = (uint32_t)(data & 0xFFFFFFFF); // Write the first word
    address += 4; // Move to the next aligned double word address
    *(__IO uint32_t*)address = (uint32_t)(data >> 32); // Write the second word
    while (FLASH->SR & FLASH_SR_BSY);    // Wait until the BSY bit is cleared
    FLASH->SR = FLASH_SR_EOP;            // Check and clear EOP flag
    FLASH->CR &= ~FLASH_CR_PG;          // Clear the PG bit in the Flash control register
    HAL_FLASH_Lock();                   //lock the flash
}

uint32_t flashReadData(uint32_t *address){

  __IO uint32_t read_data = *(__IO uint32_t *)address;
  return (uint32_t)read_data;

}

这是我的测试代码

    clearFlash(1,63);
    flash_program_double_word(address_to_write, data_to_write);
    data_been_read = flashReadData(address_to_write);

所以从STM32CubeIDE的内存中，我可以看到页面中的所有地址都被擦除了0xFFFFFFFF但那里什么也没写，谁能帮忙吗？

谢谢。

我还尝试了很多其他方法，但都失败了，例如 使用此库 https://github.com/nimaltd/ee 以及使用基于本应用笔记的 HAL 函数 https://www.st.com/resource/en/application_note/an3969-eeprom-emulation-in-stm32f40xstm32f41x-microcontrollers-stmicroelectronics.pdf